AOTF11S65L

Symbol Micros: TAOTF11s65l

312978

TAOTF11s65l

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Case : TO220FP

Datasheet

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N-MOSFET 650V 11A

Parameters

Open channel resistance:	399mOhm
Max. drain current:	11A
Max. power loss:	198W
Case:	TO220FP
Manufacturer:	ALPHA&OMEGA
Max. drain-source voltage:	650V
Transistor type:	aMOS

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• Parameters

Open channel resistance:	399mOhm
Max. drain current:	11A
Max. power loss:	198W
Case:	TO220FP
Manufacturer:	ALPHA&OMEGA
Max. drain-source voltage:	650V
Transistor type:	aMOS
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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