AP2303GN-HF-3 ADVANCED POWER

Symbol Micros: TAP2303gn-hf-3

88408

TAP2303gn-hf-3

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

P-MOSFET 30V 1.9A 1.38W

Parameters

Open channel resistance:	460mOhm
Max. drain current:	1,9A
Max. power loss:	1,38W
Case:	SOT23
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP2303GN-HF-3 N3. RoHS Case style: SOT23t/r Datasheet

In stock:

160 pcs.

Quantity of pcs.	3+	10+	50+	300+	1500+
Net price (EUR)	0,3194	0,2095	0,1506	0,1289	0,1226

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Packaging:
1500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	460mOhm
Max. drain current:	1,9A
Max. power loss:	1,38W
Case:	SOT23
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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