AP2311GN-HF-3 ADVANCED POWER

Micros part number: TAP2311gn-hf-3
Package: SOT23
P-MOSFET 1.8A 60V 1.38W 0.25Ω
Parameters
Rezystancja drenu (Rds on): 0,250 Ohm
Prąd drenu: 1,8A
Moc (W): 1,38W
Obudowa: SOT23
Napięcie dren-źródło [Uds]: 60V
Producent: Advanced Power Electronics Corp.
Typ tranzystora: P-MOSFET
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP2311GN-HF-3 Pbf B22D Package: SOT23t/r In stock: 0 pcs.
Quantity 3+ 20+ 100+ 300+ 1000+
Net price (PLN) 1,3100 0,7230 0,5690 0,5270 0,5050
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Standard packaging:
1000
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP2311GN-HF RoHS Package: SOT23t/r In stock: 816 pcs.
Quantity 3+ 20+ 100+ 300+ 1000+
Net price (PLN) 1,3100 0,7230 0,5690 0,5270 0,5050
Add to comparison tool
Standard packaging:
3000/6000
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP2311GN RoHS Package: SOT23t/r In stock: 5500 pcs.
Quantity 3+ 20+ 100+ 300+ 1000+
Net price (PLN) 1,3100 0,7230 0,5690 0,5270 0,5050
Add to comparison tool
Standard packaging:
3000
Rezystancja drenu (Rds on): 0,250 Ohm
Prąd drenu: 1,8A
Moc (W): 1,38W
Obudowa: SOT23
Napięcie dren-źródło [Uds]: 60V
Producent: Advanced Power Electronics Corp.
Typ tranzystora: P-MOSFET
Temperatura pracy zakres: -55°C ~ 150°C
Montaż: SMD
Polaryzacja: unipolarny