AP2311GN

Symbol Micros: TAP2311GN VBS

366632

TAP2311GN VBS

Contractor Symbol:

Case : SOT23

Datasheet

Technical drawing Add to favourites

60V 4,5A 4,2W 1V 1 piece P-channel SOT-23 MOSFETs ROHS AP2311GN-VB; AP2311GN-HF; AP2311GN-HF-3-B22D;

Parameters

Open channel resistance:	85mOhm
Max. drain current:	4,5A
Max. power loss:	4,2W
Case:	SOT23
Manufacturer:	VBS
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

         

 

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• Parameters

Open channel resistance:	85mOhm
Max. drain current:	4,5A
Max. power loss:	4,2W
Case:	SOT23
Manufacturer:	VBS
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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