AP2313GN-HF ADVANCED POWER

Symbol Micros: TAP2313gn-hf-3
Contractor Symbol:
Case : SOT23
P-MOSFET 20V 2.5A 0.83W
Parameters
Open channel resistance: 300mOhm
Max. drain current: 2,5A
Max. power loss: 830mW
Case: SOT23
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP2313GN-HF-3 RoHS Case style: SOT23t/r Datasheet
In stock:
20 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2802 0,1485 0,1151 0,1061 0,1017
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Packaging:
100
Open channel resistance: 300mOhm
Max. drain current: 2,5A
Max. power loss: 830mW
Case: SOT23
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD