AP2530GY-HF ADVANCED POWER

Symbol Micros: TAP2530gy-hf

98211

TAP2530gy-hf

Contractor Symbol:

Case : SOT26

Datasheet

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N/P-MOSFET 30V 3.3A 1.14W

Parameters

Open channel resistance:	280mOhm
Max. drain current:	3,3A
Max. power loss:	1,14W
Case:	SOT26
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	N/P-MOSFET

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• Parameters

Open channel resistance:	280mOhm
Max. drain current:	3,3A
Max. power loss:	1,14W
Case:	SOT26
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	N/P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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