AP4435GH APEC

Symbol Micros: TAP4435gh

107510

TAP4435gh

Contractor Symbol:

Case : TO252

Datasheet

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P-MOSFET 30C 20mΩ 20A 44.6W

Parameters

Open channel resistance:	36mOhm
Max. drain current:	40A
Max. power loss:	44,6W
Case:	TO252
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GH-HF RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,4227	0,2333	0,1835	0,1700	0,1629

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GH-HF RoHS Case style: TO252t/r Datasheet

In stock:

40 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,4227	0,2333	0,1835	0,1700	0,1629

Add to comparison tool Add inquiry (RFQ)

Packaging:
200 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	36mOhm
Max. drain current:	40A
Max. power loss:	44,6W
Case:	TO252
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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