AP4435GM-HF ADVANCED POWER

Symbol Micros: TAP4435gm-hf-3
Contractor Symbol:
Case : SO 8
P-MOSFET 30V 9A 2.5W
Parameters
Open channel resistance: 32mOhm
Max. drain current: 9A
Max. power loss: 2,5W
Case: SO 8
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GM RoHS Case style: SOP08t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,4398 0,2871 0,2063 0,1803 0,1690
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Packaging:
200
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP4435GM RoHS Case style: SO 8 Datasheet
In stock:
30 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,4491 0,2477 0,1942 0,1799 0,1725
Add to comparison tool
Packaging:
100
Open channel resistance: 32mOhm
Max. drain current: 9A
Max. power loss: 2,5W
Case: SO 8
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD