APT68GA60LD40

Symbol Micros: TAPT68ga60ld40

320827

TAPT68ga60ld40

Contractor Symbol:

Case : TO264

Datasheet

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Transistor IGBT; PT; 600V; 300V; 198nC; 68A; 520W; -55°C~150°C;

Parameters

Open channel resistance:	4,7Ohm
Max. drain current:	68A
Max. power loss:	520W
Case:	TO264
Manufacturer:	MICROCHIP
Max. drain-source voltage:	600V
Transistor type:	IGBT

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• Parameters

Open channel resistance:	4,7Ohm
Max. drain current:	68A
Max. power loss:	520W
Case:	TO264
Manufacturer:	MICROCHIP
Max. drain-source voltage:	600V
Transistor type:	IGBT
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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