BC547BTA TO92-3(ammo,formed) ONSEMI

Symbol Micros: TBC547bta ONS

528974

TBC547bta ONS

Contractor Symbol:

Case : TO92ammoformed

Datasheet

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Bipolar (BJT) Transistor NPN 50 V 100 mA 300MHz 500 mW Through Hole TO-92-3

Parameters

Power dissipation:	500mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	800
Case:	TO92ammoformed
Cutoff frequency:	300MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: BC547BTA RoHS Case style: TO92ammoformed Datasheet

In stock:

2000 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,2222	0,1051	0,0588	0,0444	0,0404

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Packaging:
2000 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: BC547BTA Case style: TO92ammoformed  

External warehouse:

15996 pcs.

Quantity of pcs.	12000+ (Please wait for the order confirmation)
Net price (EUR)	0,0404

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Packaging:
2000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	500mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	800
Case:	TO92ammoformed
Cutoff frequency:	300MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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