BC547BTA TO92-3(ammo,formed) ONSEMI
Symbol Micros:
TBC547bta ONS
Case : TO92ammoformed
Bipolar (BJT) Transistor NPN 50 V 100 mA 300MHz 500 mW Through Hole TO-92-3
Parameters
| Power dissipation: | 500mW |
| Manufacturer: | ON SEMICONDUCTOR |
| Current gain factor: | 800 |
| Case: | TO92ammoformed |
| Cutoff frequency: | 300MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Power dissipation: | 500mW |
| Manufacturer: | ON SEMICONDUCTOR |
| Current gain factor: | 800 |
| Case: | TO92ammoformed |
| Cutoff frequency: | 300MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | NPN |
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