BC63916_D27Z TO92(T/R) ONSEMI

Symbol Micros: TBC63916-D27Z
Contractor Symbol:
Case : TO92t/r
Trans GP BJT NPN 80V 1A 830mW 3-Pin TO-92 T/R Substitute: BC63916-D27Z; BC63916D27Z;
Parameters
Power dissipation: 830mW
Manufacturer: ONSEMI
Current gain factor: 250
Case: TO92
Cutoff frequency: 100MHz
Max. collector current: 1A
Max collector-emmiter voltage: 80V
Manufacturer:: ON-Semiconductor Manufacturer part number: BC63916-D27Z RoHS Case style: TO92ammoformed Datasheet
In stock:
2000 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,3244 0,1802 0,1423 0,1293 0,1250
Add to comparison tool
Packaging:
2000
Manufacturer:: ON-Semiconductor Manufacturer part number: BC63916_D27Z Case style: TO92t/r  
External warehouse:
4000 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,1250
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: BC63916-D27Z Case style: TO92t/r  
External warehouse:
2000 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,1007
Add to comparison tool
Packaging:
2000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Power dissipation: 830mW
Manufacturer: ONSEMI
Current gain factor: 250
Case: TO92
Cutoff frequency: 100MHz
Max. collector current: 1A
Max collector-emmiter voltage: 80V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN