BC807-25 (printed BC807-40 on Units)
Symbol Micros:
TBC80725 re-ex
Case : SOT23-3
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V Bipolar (BJT) Transistor PNP 45V 500mA 80MHz 250mW Surface Mount TO-236AB
Parameters
| Power dissipation: | 250mW |
| Manufacturer: | NXP |
| Current gain factor: | 600 |
| Case: | SOT23-3 |
| Cutoff frequency: | 80MHz |
| Max. collector current: | 500mA |
| Max collector-emmiter voltage: | 45V |
| Power dissipation: | 250mW |
| Manufacturer: | NXP |
| Current gain factor: | 600 |
| Case: | SOT23-3 |
| Cutoff frequency: | 80MHz |
| Max. collector current: | 500mA |
| Max collector-emmiter voltage: | 45V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | PNP |
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