BC807-40,215

Symbol Micros: TBC80740
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
Transistor PNP; 600; 250mW; 45V; 500mA; 80MHz; -65°C ~ 150°C; Equivalent: BC807-40,235; BC807-40,215; (BC807-40/DG/B4R); BC807-40 smd;
Parameters
Power dissipation: 250mW
Manufacturer: NXP
Current gain factor: 600
Case: SOT23
Cutoff frequency: 80MHz
Max. collector current: 500mA
Max collector-emmiter voltage: 45V
Manufacturer:: NXP Manufacturer part number: BC807-40,215 RoHS Case style: SOT23t/r Datasheet
In stock:
114679 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2611 0,1389 0,1078 0,0995 0,0952
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Packaging:
3000
Manufacturer:: ON-Semiconductor Manufacturer part number: BC807-40LT1G Case style: SOT23  
External warehouse:
36000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0952
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: BC807-40LT1G Case style: SOT23  
External warehouse:
459000 pcs.
Quantity of pcs. 36000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0952
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 250mW
Manufacturer: NXP
Current gain factor: 600
Case: SOT23
Cutoff frequency: 80MHz
Max. collector current: 500mA
Max collector-emmiter voltage: 45V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP
Detailed description

Transistor type: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 500mA
Power: 250mW
Case: SOT23
Mounting: SMD

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