BC847BPDW1T1G ONS

Symbol Micros: TBC847bpdw

112851

TBC847bpdw

Contractor Symbol:

Case : SOT363

Datasheet

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NPN 100mA 45V 250mW 100MHz BC847BPDW1T2G BC847BPDW1T3G

Parameters

Power dissipation:	380mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Current gain factor:	475
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	45V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: BC847BPDW1T1G RoHS Case style: SOT363 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1320	0,0605	0,0330	0,0248	0,0220

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Power dissipation:	380mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363
Current gain factor:	475
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	45V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN/PNP

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