BC847BPN

Symbol Micros: TBC847bpn
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Case : SOT363
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BC Series 45 V 100 mA NPN/PNP Silicon Dual General Purpose Transistor BC847BPDW1T1G
Parameters
Power dissipation: 400mW
Current gain factor: 450
Cutoff frequency: 100MHz
Manufacturer: NXP
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 45V
Manufacturer:: NXP Manufacturer part number: BC847BPN,115 RoHS Case style: SOT363 t/r Datasheet
In stock:
12940 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2033 0,1030 0,0625 0,0495 0,0451
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Packaging:
3000
Power dissipation: 400mW
Current gain factor: 450
Cutoff frequency: 100MHz
Manufacturer: NXP
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 45V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN/PNP

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