BC847BS China

Symbol Micros: TBC847bs c

335202

TBC847bs  c

Contractor Symbol:

Case : SOT363

Datasheet

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Transistor Dual-NPN; Bipolar; 300mV; 200mW; 45V; 100mA; 100MHz; -55°C~150°C;

Parameters

Power dissipation:	200mW
Current gain factor:	200
Case:	SOT363
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	45V
Operating temperature (range):	-55°C ~ 150°C

All parameters

         

 

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Estimated date:
2026-05-30

Quantity of pcs.: 3000

• Parameters

Power dissipation:	200mW
Current gain factor:	200
Case:	SOT363
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	45V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	2xNPN

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