BC847DW
Symbol Micros:
TBC847dw c
Case : SOT363
Transistor PNP; Bipolar; 6V; 200mW; 45V; 100mA; 100MHz; -55°C~150°C; Substitute: BC847DW 1Ft;
Parameters
| Power dissipation: | 200mW |
| Current gain factor: | 800 |
| Cutoff frequency: | 100MHz |
| Manufacturer: | CBI |
| Case: | SOT363 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 45V |
| Power dissipation: | 200mW |
| Current gain factor: | 800 |
| Cutoff frequency: | 100MHz |
| Manufacturer: | CBI |
| Case: | SOT363 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 45V |
| Operating temperature (range): | -55°C ~ 150°C |
| Transistor type: | NPN |
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