BC849CLT1G

Symbol Micros: TBC849c ONS

154726

TBC849c ONS

Contractor Symbol:

Case : SOT23-3

Datasheet

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Trans GP BJT NPN 30V 0.1A 250mW Automotive 3-Pin SOT-23

Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	800
Case:	SOT23-3
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	30V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: BC849CLT1G RoHS Case style: SOT23-3 t/r Datasheet

In stock:

3880 pcs.

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,0919	0,0362	0,0212	0,0155	0,0141

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000 Quantity (multiple: 10)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: BC849CLT1G Case style: SOT23-3  

External warehouse:

192000 pcs.

Quantity of pcs.	12000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0141

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: BC849CLT1G Case style: SOT23-3  

External warehouse:

27000 pcs.

Quantity of pcs.	15000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0141

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: BC849CLT1G Case style: SOT23-3  

External warehouse:

1683000 pcs.

Quantity of pcs.	42000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0141

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	800
Case:	SOT23-3
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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