BC850BLT1 smd ONS

Symbol Micros: TBC850blt1

10501

TBC850blt1

Contractor Symbol:

Case : SOT23

Datasheet

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NPN 100mA 45V 225mW 100MHz BC850B, BC850, BC850BLT1, BC850BE6327HTSA1

Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23
Current gain factor:	450
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	45V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: BC850BLT1G RoHS Case style: SOT23t/r Datasheet

In stock:

26500 pcs.

Quantity of pcs.	10+	50+	400+	3000+	12000+
Net price (EUR)	0,0812	0,0314	0,0153	0,0122	0,0116

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Packaging:
3000 Quantity (multiple: 10)

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• Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT23
Current gain factor:	450
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	45V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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