BC856BS
Symbol Micros:
TBC856bs
Case : SC-88
2xPNP 100mA 65V 300mW 100MHz BC856BS.115 BC856BS _R1 _00001 BC856BS_ R2 _00001 BC856BS,135 BC856BS-TP
Parameters
| Power dissipation: | 300mW |
| Current gain factor: | 450 |
| Cutoff frequency: | 100MHz |
| Manufacturer: | NXP |
| Case: | SC-88 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 65V |
| Power dissipation: | 300mW |
| Current gain factor: | 450 |
| Cutoff frequency: | 100MHz |
| Manufacturer: | NXP |
| Case: | SC-88 |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 65V |
| Operating temperature (range): | -55°C ~ 150°C |
| Transistor type: | 2xPNP |
Detailed description
| Manufacturer | Nexperia USA Inc. | |
| Transistor Type | 2 PNP (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 65V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA | |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V | |
| Power - Max | 300mW | |
| Frequency - Transition | 100MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount |
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