BC856S
Symbol Micros:
TBC856s
Case : SOT363
2PNP 0.1A 65V 300mW 100MHz BC856SF BC856SH6327XTSA1 BC856S,125 BC856S,115
Parameters
| Power dissipation: | 300mW |
| Manufacturer: | NXP |
| Current gain factor: | 110 |
| Case: | SOT363 |
| Cutoff frequency: | 100MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 65V |
| Power dissipation: | 300mW |
| Manufacturer: | NXP |
| Current gain factor: | 110 |
| Case: | SOT363 |
| Cutoff frequency: | 100MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 65V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | 2xPNP |
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