BC857BDW1T1G

Symbol Micros: TBC857bdw
Contractor Symbol:
Case : SOT363 t/r
Trans GP BJT PNP 45V 0.1A 380mW Automotive
Parameters
Power dissipation: 380mW
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 475
Case: SOT363 t/r
Cutoff frequency: 100MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 45V
Manufacturer:: ON-Semicoductor Manufacturer part number: BC857BDW1T1G RoHS Case style: SOT363 t/r Datasheet
In stock:
3000 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1548 0,0737 0,0413 0,0314 0,0282
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Packaging:
3000
Manufacturer:: ON-Semicoductor Manufacturer part number: BC857BDW1T1G Case style: SOT363 t/r  
External warehouse:
369000 pcs.
Quantity of pcs. 9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0282
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: BC857BDW1T1G Case style: SOT363 t/r  
External warehouse:
399000 pcs.
Quantity of pcs. 9000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0282
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 380mW
Manufacturer: ON SEMICONDUCTOR
Current gain factor: 475
Case: SOT363 t/r
Cutoff frequency: 100MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 45V
Operating temperature (range): -55°C ~ 150°C
Transistor type: 2xPNP