BC857BDW1T1G

Symbol Micros: TBC857bdw

121486

TBC857bdw

Contractor Symbol:

Case : SOT363 t/r

Datasheet

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Trans GP BJT PNP 45V 0.1A 380mW Automotive

Parameters

Power dissipation:	380mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363 t/r
Current gain factor:	475
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	45V

All parameters

Manufacturer:: ON-Semiconductor Manufacturer part number: BC857BDW1T1G RoHS Case style: SOT363 t/r Datasheet

In stock:

4900 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1512	0,0719	0,0403	0,0307	0,0275

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: ON-Semiconductor Manufacturer part number: BC857BDW1T1G Case style: SOT363 t/r  

External warehouse:

501000 pcs.

Quantity of pcs.	9000+ (Please wait for the order confirmation)
Net price (EUR)	0,0275

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	380mW
Manufacturer:	ON SEMICONDUCTOR
Case:	SOT363 t/r
Current gain factor:	475
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	45V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	2xPNP

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