BC857S SOT363 HT SEMI

Symbol Micros: TBC857s HTSEMI

531515

TBC857s HTSEMI

Contractor Symbol:

Case : SOT363

Datasheet

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DUAL-PNP -100mA -45V 300mW 100MHz

Parameters

Power dissipation:	300mW
Manufacturer:	HT
Current gain factor:	630
Case:	SOT363
Cutoff frequency:	200MHz
Max. collector current:	200mA
Max collector-emmiter voltage:	45V

All parameters

Manufacturer:: HT SEMI Manufacturer part number: BC857S RoHS 3C Case style: SOT363 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	10+	50+	400+	3000+	12000+
Net price (EUR)	0,0760	0,0294	0,0143	0,0114	0,0109

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Packaging:
3000 Quantity (multiple: 10)

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• Parameters

Power dissipation:	300mW
Manufacturer:	HT
Current gain factor:	630
Case:	SOT363
Cutoff frequency:	200MHz
Max. collector current:	200mA
Max collector-emmiter voltage:	45V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	2xPNP

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