BCM856S

Symbol Micros: TBCM856s
Contractor Symbol:
Case : SOT363
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 250MHz 250mW BCM856SH6327 BCM856SH6327XTSA1
Parameters
Power dissipation: 250mW
Current gain factor: 450
Cutoff frequency: 250MHz
Manufacturer: Infineon Technologies
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 65V
Manufacturer:: Infineon Manufacturer part number: BCM856SH6327 RoHS Case style: SOT363 t/r Datasheet
In stock:
209 pcs.
Quantity of pcs. 5+ 20+ 100+ 309+ 1236+
Net price (EUR) 0,2501 0,1257 0,0752 0,0623 0,0556
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Packaging:
309
Power dissipation: 250mW
Current gain factor: 450
Cutoff frequency: 250MHz
Manufacturer: Infineon Technologies
Case: SOT363
Max. collector current: 100mA
Max collector-emmiter voltage: 65V
Operating temperature (range): -65°C ~ 150°C
Transistor type: 2xPNP