BCM856S

Symbol Micros: TBCM856s

125697

TBCM856s

Contractor Symbol:

Case : SOT363

Datasheet

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Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 250MHz 250mW BCM856SH6327 BCM856SH6327XTSA1

Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	450
Case:	SOT363
Cutoff frequency:	250MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	65V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCM856SH6327 RoHS Case style: SOT363 t/r Datasheet

In stock:

209 pcs.

Quantity of pcs.	5+	20+	100+	309+	1236+
Net price (EUR)	0,2536	0,1275	0,0763	0,0632	0,0563

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Packaging:
309 Quantity (multiple: 1)

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• Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	450
Case:	SOT363
Cutoff frequency:	250MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	65V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	2xPNP

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