BCR08PNH6327 Infineon

Symbol Micros: TBCR08pn

113332

TBCR08pn

Contractor Symbol:

Case : SOT363

Datasheet

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NPN/PNP 50V 170MHz 250mW BCR08PNH6327XTSA1

Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT363
Cutoff frequency:	170MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR08PNH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet

In stock:

2500 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1406	0,0668	0,0376	0,0287	0,0256

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BCR08PNH6327XTSA1 Case style: SOT363  

External warehouse:

9000 pcs.

Quantity of pcs.	9000+ (Please wait for the order confirmation)
Net price (EUR)	0,0534

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT363
Cutoff frequency:	170MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN/PNP

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