BCR108S

Symbol Micros: TBCR108s
Contractor Symbol:
Case : SOT363
2NPN 0.1A 50V 0.25W
Parameters
Power dissipation: 250mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT363
Cutoff frequency: 170MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR108S RoHS Case style: SOT363 t/r Datasheet
In stock:
90 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2138 0,1179 0,0781 0,0651 0,0611
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Packaging:
500
Manufacturer:: Infineon Manufacturer part number: BCR108SH6327XTSA1 Case style: SOT363  
External warehouse:
93000 pcs.
Quantity of pcs. 3000+ (Please wait for the order confirmation)
Net price (EUR) 0,0611
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: BCR108SH6327XTSA1 Case style: SOT363  
External warehouse:
22000 pcs.
Quantity of pcs. 500+ (Please wait for the order confirmation)
Net price (EUR) 0,0703
Add to comparison tool
Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Power dissipation: 250mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT363
Cutoff frequency: 170MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: 2xNPN