BCR10PN Infineon Tech

Symbol Micros: TBCR10pn

97894

TBCR10pn

Contractor Symbol:

Case : SOT363

Datasheet

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NPN/PNP 100mA 50V 130MHz 250mW

Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	30
Case:	SOT363
Cutoff frequency:	130MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR10PNH6327 RoHS Case style: SOT363 t/r Datasheet

In stock:

2900 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1549	0,0735	0,0414	0,0314	0,0281

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	30
Case:	SOT363
Cutoff frequency:	130MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN/PNP

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