BCR112

Symbol Micros: TBCR112

54542

TBCR112

Contractor Symbol:

Case : SOT23

Datasheet

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NPN 100mA 50V 200mW 140MHz w/ res. 4.7k+4.7k BCR112E6327, BCR112E6327HTSA1, SP000010747

Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Current gain factor:	20
Case:	SOT23
Cutoff frequency:	140MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR112E6327HTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

16440 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,1808	0,0858	0,0482	0,0366	0,0329

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Packaging:
3000 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BCR112E6327HTSA1 Case style: SOT23  

External warehouse:

58000 pcs.

Quantity of pcs.	500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0329

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Packaging:
500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Current gain factor:	20
Case:	SOT23
Cutoff frequency:	140MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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