BCR112

Symbol Micros: TBCR112
Contractor Symbol:
Case : SOT23
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NPN 100mA 50V 200mW 140MHz w/ res. 4.7k+4.7k BCR112E6327, BCR112E6327HTSA1, SP000010747
Parameters
Power dissipation: 200mW
Current gain factor: 20
Cutoff frequency: 140MHz
Manufacturer: Infineon Technologies
Case: SOT23
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR112E6327HTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
11750 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2026 0,0961 0,0542 0,0410 0,0368
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Packaging:
3000
Power dissipation: 200mW
Current gain factor: 20
Cutoff frequency: 140MHz
Manufacturer: Infineon Technologies
Case: SOT23
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

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