BCR112WH6327 Infineon

Symbol Micros: TBCR112w

109093

TBCR112w

Contractor Symbol:

Case : SOT323

Datasheet

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NPN 50V 100mA 140MHz 250mW BCR112WH6327XTSA1

Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	20
Cutoff frequency:	140MHz
Case:	SOT323
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR 112W H6327 RoHS Case style: SOT323 t/r Datasheet

In stock:

2350 pcs.

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,1053	0,0417	0,0243	0,0178	0,0162

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Packaging:
3000 Quantity (multiple: 10)

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• Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	20
Cutoff frequency:	140MHz
Case:	SOT323
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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