BCR129E6327 Infineon

Symbol Micros: TBCR129

109087

TBCR129

Contractor Symbol:

Case : SOT23-3

Datasheet

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NPN 50V 100mA 150MHz 200mW BCR129E6327HTSA1

Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Current gain factor:	630
Cutoff frequency:	150MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR 129 E6327 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

2790 pcs.

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,0901	0,0356	0,0208	0,0152	0,0139

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Packaging:
3000 Quantity (multiple: 10)

- +

Manufacturer:: Infineon Manufacturer part number: BCR129E6327HTSA1 Case style: SOT23-3  

External warehouse:

57000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,0428

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Current gain factor:	630
Cutoff frequency:	150MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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