BCR133

Symbol Micros: TBCR133
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
NPN 100mA 50V 200mW 130MHz w/ res. 10k+10k BCR133E ; Possible Substitute: PDTC114ET BCR133E6433
Parameters
Power dissipation: 200mW
Current gain factor: 30
Cutoff frequency: 130MHz
Manufacturer: Infineon Technologies
Case: SOT23
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR133E6327HTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
295 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2006 0,0953 0,0536 0,0406 0,0365
Add to comparison tool
Packaging:
3000
Power dissipation: 200mW
Current gain factor: 30
Cutoff frequency: 130MHz
Manufacturer: Infineon Technologies
Case: SOT23
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols