BCR158 INF

Symbol Micros: TBCR158
Contractor Symbol:
Case : SOT23-3
PNP 50V 100mA 200mW BCR158E6327 BCR158E6327HTSA1
Parameters
Power dissipation: 200mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT23-3
Cutoff frequency: 200MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR158E6327HTSA1 RoHS Case style: SOT23-3 t/r Datasheet
In stock:
640 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1660 0,0788 0,0444 0,0337 0,0302
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Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: BCR158E6327HTSA1 Case style: SOT23-3  
External warehouse:
18000 pcs.
Quantity of pcs. 6000+ (Please wait for the order confirmation)
Net price (EUR) 0,0375
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: BCR158E6327HTSA1 Case style: SOT23-3  
External warehouse:
35500 pcs.
Quantity of pcs. 500+ (Please wait for the order confirmation)
Net price (EUR) 0,0585
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Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Power dissipation: 200mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT23-3
Cutoff frequency: 200MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP