BCR158 INF
Symbol Micros:
TBCR158
Case : SOT23-3
PNP 50V 100mA 200mW BCR158E6327 BCR158E6327HTSA1
Parameters
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Case: | SOT23-3 |
| Current gain factor: | 70 |
| Cutoff frequency: | 200MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR158E6327HTSA1 RoHS
Case style: SOT23-3 t/r
Datasheet
In stock:
640 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,1627 | 0,0772 | 0,0435 | 0,0330 | 0,0296 |
Manufacturer:: Infineon
Manufacturer part number: BCR158E6327HTSA1
Case style: SOT23-3
External warehouse:
26000 pcs.
| Quantity of pcs. | 500+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0968 |
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Case: | SOT23-3 |
| Current gain factor: | 70 |
| Cutoff frequency: | 200MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | PNP |
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