BCR166E6327 Infineon

Symbol Micros: TBCR166

109042

TBCR166

Contractor Symbol:

Case : SOT23-3

Datasheet

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PNP 50V 100mA 160MHz 200mW BCR166E6327HTSA1

Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Current gain factor:	70
Cutoff frequency:	160MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR 166 E6327 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

2700 pcs.

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,0894	0,0353	0,0206	0,0151	0,0138

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Packaging:
3000 Quantity (multiple: 10)

- +

Manufacturer:: Infineon Manufacturer part number: BCR166E6327HTSA1 Case style: SOT23-3  

External warehouse:

33000 pcs.

Quantity of pcs.	6000+ (Please wait for the order confirmation)
Net price (EUR)	0,0375

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Case:	SOT23-3
Current gain factor:	70
Cutoff frequency:	160MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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