BCR169
Symbol Micros:
TBCR169
Case : SOT23-3
PNP 100mA 50V 200mW 200MHz w/ res. 47k BCR169E6327 ; BCR169E6327HTSA1
Parameters
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Current gain factor: | 630 |
| Case: | SOT23-3 |
| Cutoff frequency: | 200MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR169E6327HTSA1 Pbf WSs
Case style: SOT23-3 t/r
Datasheet
In stock:
499 pcs.
| Quantity of pcs. | 10+ | 40+ | 100+ | 499+ | 2495+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,0895 | 0,0393 | 0,0258 | 0,0165 | 0,0138 |
Manufacturer:: Infineon
Manufacturer part number: BCR169E6327HTSA1
Case style: SOT23-3
External warehouse:
33000 pcs.
| Quantity of pcs. | 3000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0367 |
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Current gain factor: | 630 |
| Case: | SOT23-3 |
| Cutoff frequency: | 200MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | PNP |
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