BCR169

Symbol Micros: TBCR169
Contractor Symbol:
Case : SOT23-3
PNP 100mA 50V 200mW 200MHz w/ res. 47k BCR169E6327 ; BCR169E6327HTSA1
Parameters
Power dissipation: 200mW
Manufacturer: Infineon Technologies
Current gain factor: 630
Case: SOT23-3
Cutoff frequency: 200MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR169E6327HTSA1 Pbf WSs Case style: SOT23-3 t/r Datasheet
In stock:
499 pcs.
Quantity of pcs. 10+ 40+ 100+ 499+ 2495+
Net price (EUR) 0,0895 0,0393 0,0258 0,0165 0,0138
Add to comparison tool
Packaging:
499
Manufacturer:: Infineon Manufacturer part number: BCR169E6327HTSA1 Case style: SOT23-3  
External warehouse:
33000 pcs.
Quantity of pcs. 3000+ (Please wait for the order confirmation)
Net price (EUR) 0,0367
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Power dissipation: 200mW
Manufacturer: Infineon Technologies
Current gain factor: 630
Case: SOT23-3
Cutoff frequency: 200MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP