BCR169

Symbol Micros: TBCR169
Contractor Symbol:
Case : SOT23-3
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PNP 100mA 50V 200mW 200MHz w/ res. 47k BCR169E6327 ; BCR169E6327HTSA1
Parameters
Power dissipation: 200mW
Current gain factor: 630
Cutoff frequency: 200MHz
Manufacturer: Infineon Technologies
Case: SOT23-3
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR169E6327HTSA1 Pbf WSs Case style: SOT23-3 t/r Datasheet
In stock:
499 pcs.
Quantity of pcs. 10+ 20+ 50+ 100+ 499+
Net price (EUR) 0,0967 0,0614 0,0358 0,0254 0,0149
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Packaging:
499
Power dissipation: 200mW
Current gain factor: 630
Cutoff frequency: 200MHz
Manufacturer: Infineon Technologies
Case: SOT23-3
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP

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