BCR191

Symbol Micros: TBCR191
Contractor Symbol:
Case : SOT23
PNP 100mA 50V 200mW 200MHz w/ res. 22k+22k BCR191E6327
Parameters
Power dissipation: 200mW
Cutoff frequency: 200MHz
Current gain factor: 50
Manufacturer: Infineon Technologies
Case: SOT23
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR191 WOs RoHS Case style: SOT23t/r Datasheet
In stock:
300 pcs.
Quantity of pcs. 10+ 50+ 200+ 900+ 3600+
Net price (EUR) 0,0866 0,0342 0,0200 0,0149 0,0133
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Packaging:
900
Manufacturer:: Infineon Manufacturer part number: BCR191E6327HTSA1 Case style: SOT23  
External warehouse:
13500 pcs.
Quantity of pcs. 500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0326
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Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: BCR191E6327HTSA1 Case style: SOT23  
External warehouse:
30000 pcs.
Quantity of pcs. 6000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0278
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Power dissipation: 200mW
Cutoff frequency: 200MHz
Current gain factor: 50
Manufacturer: Infineon Technologies
Case: SOT23
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP