BCR191
Symbol Micros:
TBCR191
Case : SOT23
PNP 100mA 50V 200mW 200MHz w/ res. 22k+22k BCR191E6327
Parameters
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Case: | SOT23 |
| Current gain factor: | 50 |
| Cutoff frequency: | 200MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR191 WOs RoHS
Case style: SOT23t/r
Datasheet
In stock:
300 pcs.
| Quantity of pcs. | 10+ | 50+ | 200+ | 900+ | 3600+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,0854 | 0,0337 | 0,0198 | 0,0147 | 0,0131 |
Manufacturer:: Infineon
Manufacturer part number: BCR191E6327HTSA1
Case style: SOT23
External warehouse:
33000 pcs.
| Quantity of pcs. | 3000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0424 |
Manufacturer:: Infineon
Manufacturer part number: BCR191E6327HTSA1
Case style: SOT23
External warehouse:
25000 pcs.
| Quantity of pcs. | 500+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0907 |
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Case: | SOT23 |
| Current gain factor: | 50 |
| Cutoff frequency: | 200MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | PNP |
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