BCR192E6327

Symbol Micros: TBCR192e

108788

TBCR192e

Contractor Symbol:

Case : SOT23

Datasheet

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PNP transistor bipolar 50V 100mA BCR192E6785

Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT23
Cutoff frequency:	200MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR 192 E6327 RoHS Case style: SOT23t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,1404	0,0643	0,0347	0,0258	0,0234

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BCR192E6327HTSA1 Case style: SOT23  

External warehouse:

27000 pcs.

Quantity of pcs.	12000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0295

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT23
Cutoff frequency:	200MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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