BCR192E6327
Symbol Micros:
TBCR192e
Case : SOT23
PNP transistor bipolar 50V 100mA BCR192E6785
Parameters
Power dissipation: | 200mW |
Manufacturer: | Infineon Technologies |
Current gain factor: | 70 |
Case: | SOT23 |
Cutoff frequency: | 200MHz |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR 192 E6327 RoHS
Case style: SOT23t/r
Datasheet
In stock:
100 pcs.
Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 2000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,1393 | 0,0638 | 0,0345 | 0,0256 | 0,0232 |
Manufacturer:: Infineon
Manufacturer part number: BCR192E6327HTSA1
Case style: SOT23
External warehouse:
36000 pcs.
Quantity of pcs. | 15000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,0271 |
Power dissipation: | 200mW |
Manufacturer: | Infineon Technologies |
Current gain factor: | 70 |
Case: | SOT23 |
Cutoff frequency: | 200MHz |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 50V |
Operating temperature (range): | -65°C ~ 150°C |
Transistor type: | PNP |
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