BCR192E6327
Symbol Micros:
TBCR192e
Case : SOT23
PNP transistor bipolar 50V 100mA BCR192E6785
Parameters
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Current gain factor: | 70 |
| Case: | SOT23 |
| Cutoff frequency: | 200MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR 192 E6327 RoHS
Case style: SOT23t/r
Datasheet
In stock:
100 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 2000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,1406 | 0,0644 | 0,0348 | 0,0258 | 0,0234 |
Manufacturer:: Infineon
Manufacturer part number: BCR192E6327HTSA1
Case style: SOT23
External warehouse:
297000 pcs.
| Quantity of pcs. | 3000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0367 |
Manufacturer:: Infineon
Manufacturer part number: BCR192E6327HTSA1
Case style: SOT23
External warehouse:
21000 pcs.
| Quantity of pcs. | 9000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0393 |
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Current gain factor: | 70 |
| Case: | SOT23 |
| Cutoff frequency: | 200MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | PNP |
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