BCR192E6327

Symbol Micros: TBCR192e
Contractor Symbol:
Case : SOT23
PNP transistor bipolar 50V 100mA BCR192E6785
Parameters
Power dissipation: 200mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT23
Cutoff frequency: 200MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR 192 E6327 RoHS Case style: SOT23t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,1387 0,0635 0,0343 0,0255 0,0231
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Packaging:
100
Power dissipation: 200mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT23
Cutoff frequency: 200MHz
Max. collector current: 100mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: PNP