BCR196E6327 Infineon

Symbol Micros: TBCR196

109032

TBCR196

Contractor Symbol:

Case : SOT23-3

Datasheet

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PNP 50V 70mA 150MHz 200mW BCR196E6327HTSA1

Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Current gain factor:	50
Case:	SOT23-3
Cutoff frequency:	150MHz
Max. collector current:	70mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR196E6327 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,0792	0,0312	0,0182	0,0133	0,0122

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Packaging:
3000 Quantity (multiple: 10)

- +

Manufacturer:: Infineon Manufacturer part number: BCR196E6327HTSA1 Case style: SOT23-3  

External warehouse:

33000 pcs.

Quantity of pcs.	12000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0295

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Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	200mW
Manufacturer:	Infineon Technologies
Current gain factor:	50
Case:	SOT23-3
Cutoff frequency:	150MHz
Max. collector current:	70mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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