BCR196E6327 Infineon
Symbol Micros:
TBCR196
Case : SOT23-3
PNP 50V 70mA 150MHz 200mW BCR196E6327HTSA1
Parameters
Power dissipation: | 200mW |
Manufacturer: | Infineon Technologies |
Current gain factor: | 50 |
Case: | SOT23-3 |
Cutoff frequency: | 150MHz |
Max. collector current: | 70mA |
Max collector-emmiter voltage: | 50V |
Power dissipation: | 200mW |
Manufacturer: | Infineon Technologies |
Current gain factor: | 50 |
Case: | SOT23-3 |
Cutoff frequency: | 150MHz |
Max. collector current: | 70mA |
Max collector-emmiter voltage: | 50V |
Operating temperature (range): | -65°C ~ 150°C |
Transistor type: | PNP |
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