BCR198E6327 Infineon
Symbol Micros:
TBCR198
Case : SOT23-3
PNP 50V 100mA 190MHz 200mW BCR198E6327HTSA1
Parameters
Power dissipation: | 200mW |
Manufacturer: | Infineon Technologies |
Current gain factor: | 70 |
Case: | SOT23-3 |
Cutoff frequency: | 190MHz |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 50V |
Power dissipation: | 200mW |
Manufacturer: | Infineon Technologies |
Current gain factor: | 70 |
Case: | SOT23-3 |
Cutoff frequency: | 190MHz |
Max. collector current: | 100mA |
Max collector-emmiter voltage: | 50V |
Operating temperature (range): | -65°C ~ 150°C |
Transistor type: | PNP |
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