BCR198E6327 Infineon
Symbol Micros:
TBCR198
Case : SOT23-3
PNP 50V 100mA 190MHz 200mW BCR198E6327HTSA1
Parameters
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Case: | SOT23-3 |
| Current gain factor: | 70 |
| Cutoff frequency: | 190MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR 198 E6327 RoHS
Case style: SOT23-3 t/r
Datasheet
In stock:
3000 pcs.
| Quantity of pcs. | 10+ | 50+ | 200+ | 1000+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,0846 | 0,0333 | 0,0195 | 0,0142 | 0,0130 |
Manufacturer:: Infineon
Manufacturer part number: BCR198E6327HTSA1
Case style: SOT23-3
External warehouse:
234000 pcs.
| Quantity of pcs. | 3000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0426 |
Manufacturer:: Infineon
Manufacturer part number: BCR198E6327HTSA1
Case style: SOT23-3
External warehouse:
9000 pcs.
| Quantity of pcs. | 9000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0397 |
| Power dissipation: | 200mW |
| Manufacturer: | Infineon Technologies |
| Case: | SOT23-3 |
| Current gain factor: | 70 |
| Cutoff frequency: | 190MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | PNP |
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