BCR198WH6327 Infineon

Symbol Micros: TBCR198w

109028

TBCR198w

Contractor Symbol:

Case : SOT323

Datasheet

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PNP 50V 100mA 190MHz 250mW BCR198WE6327XTSA1

Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Case:	SOT323
Current gain factor:	70
Cutoff frequency:	190MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR198WH6327XTSA1 RoHS Case style: SOT323 t/r Datasheet

In stock:

400 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,1132	0,0518	0,0280	0,0209	0,0189

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Packaging:
500 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BCR198WH6327XTSA1 Case style: SOT323  

External warehouse:

14500 pcs.

Quantity of pcs.	500+ (Please wait for the order confirmation)
Net price (EUR)	0,0754

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Packaging:
500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Case:	SOT323
Current gain factor:	70
Cutoff frequency:	190MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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