BCR198WH6327 Infineon
Symbol Micros:
TBCR198w
Case : SOT323
PNP 50V 100mA 190MHz 250mW BCR198WE6327XTSA1
Parameters
| Power dissipation: | 250mW |
| Manufacturer: | Infineon Technologies |
| Current gain factor: | 70 |
| Case: | SOT323 |
| Cutoff frequency: | 190MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR198WH6327XTSA1 RoHS
Case style: SOT323 t/r
Datasheet
In stock:
400 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 2000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,1170 | 0,0535 | 0,0289 | 0,0215 | 0,0195 |
Manufacturer:: Infineon
Manufacturer part number: BCR198WH6327XTSA1
Case style: SOT323
External warehouse:
15000 pcs.
| Quantity of pcs. | 3000+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0355 |
Manufacturer:: Infineon
Manufacturer part number: BCR198WH6327XTSA1
Case style: SOT323
External warehouse:
24500 pcs.
| Quantity of pcs. | 500+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,0465 |
| Power dissipation: | 250mW |
| Manufacturer: | Infineon Technologies |
| Current gain factor: | 70 |
| Case: | SOT323 |
| Cutoff frequency: | 190MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | PNP |
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