BCR35PNH6327XTSA1
Symbol Micros:
TBCR35pnh
Case : SOT363
NPN/PNP 50 V 100 mA Silicon Digital Transistor Array BCR35PNH6433XTMA1 BCR35PNH6433XT BCR35PNH6327XT BCR35PNH6327XZ BCR35PNH6433XZ
Parameters
| Power dissipation: | 250mW |
| Manufacturer: | Infineon Technologies |
| Current gain factor: | 70 |
| Case: | SOT363 |
| Cutoff frequency: | 150MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
Manufacturer:: Infineon
Manufacturer part number: BCR35PNH6327XTSA1 RoHS
Case style: SOT363 t/r
Datasheet
In stock:
2890 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,2196 | 0,1044 | 0,0586 | 0,0446 | 0,0399 |
Manufacturer:: Infineon
Manufacturer part number: BCR35PNH6433XTMA1
Case style: SOT363
External warehouse:
10000 pcs.
| Quantity of pcs. | 10000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0538 |
Manufacturer:: Infineon
Manufacturer part number: BCR35PNH6433XTMA1
Case style: SOT363
External warehouse:
40000 pcs.
| Quantity of pcs. | 10000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,0425 |
| Power dissipation: | 250mW |
| Manufacturer: | Infineon Technologies |
| Current gain factor: | 70 |
| Case: | SOT363 |
| Cutoff frequency: | 150MHz |
| Max. collector current: | 100mA |
| Max collector-emmiter voltage: | 50V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | NPN/PNP |
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