BCR35PNH6327XTSA1

Symbol Micros: TBCR35pnh

108786

TBCR35pnh

Contractor Symbol:

Case : SOT363

Datasheet

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NPN/PNP 50 V 100 mA Silicon Digital Transistor Array BCR35PNH6433XTMA1 BCR35PNH6433XT BCR35PNH6327XT BCR35PNH6327XZ BCR35PNH6433XZ

Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT363
Cutoff frequency:	150MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR35PNH6327XTSA1 RoHS Case style: SOT363 t/r Datasheet

In stock:

2890 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2172	0,1032	0,0579	0,0441	0,0395

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT363
Cutoff frequency:	150MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN/PNP

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