BCR48PNH6327 INFINEON

Symbol Micros: TBCR48pn

111470

TBCR48pn

Contractor Symbol:

Case : SOT363

Datasheet

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NPN/PNP 50V 70mA/100mA 100MHz 250mW

Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT363
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V

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• Parameters

Power dissipation:	250mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT363
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN/PNP

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