BCR505E6327 INFINEON

Symbol Micros: TBCR505

111471

TBCR505

Contractor Symbol:

Case : SOT23-3

Datasheet

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NPN 50V 500mA 100MHz 330mW

Parameters

Power dissipation:	330mW
Manufacturer:	Infineon Technologies
Cutoff frequency:	100MHz
Current gain factor:	70
Case:	SOT23-3
Max. collector current:	500mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR505E6327HTSA1 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	5+	20+	100+	300+	1000+
Net price (EUR)	0,2236	0,1222	0,0802	0,0693	0,0638

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Packaging:
1000 Quantity (multiple: 1)

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• Parameters

Power dissipation:	330mW
Manufacturer:	Infineon Technologies
Cutoff frequency:	100MHz
Current gain factor:	70
Case:	SOT23-3
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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