BCR505E6327 INFINEON

Symbol Micros: TBCR505
Contractor Symbol:
Case : SOT23-3
NPN 50V 500mA 100MHz 330mW
Parameters
Power dissipation: 330mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT23-3
Cutoff frequency: 100MHz
Max. collector current: 500mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR505E6327HTSA1 RoHS Case style: SOT23-3 t/r Datasheet
In stock:
200 pcs.
Quantity of pcs. 5+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,2230 0,1219 0,0800 0,0691 0,0637
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Packaging:
1000
Manufacturer:: Infineon Manufacturer part number: BCR505E6327HTSA1 Case style: SOT23-3  
External warehouse:
6000 pcs.
Quantity of pcs. 3000+ (Please wait for the order confirmation)
Net price (EUR) 0,0637
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: BCR505E6327HTSA1 Case style: SOT23-3  
External warehouse:
8000 pcs.
Quantity of pcs. 500+ (Please wait for the order confirmation)
Net price (EUR) 0,0798
Add to comparison tool
Packaging:
500
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Power dissipation: 330mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT23-3
Cutoff frequency: 100MHz
Max. collector current: 500mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN