BCR521E6327

Symbol Micros: TBCR521

113335

TBCR521

Contractor Symbol:

Case : SOT23-3

Datasheet

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Transistor NPN; Bipolar; 20; 12V; 330mW; 50V; 500mA; 100MHz; -65°C~150°C; Substitute: BCR521E6327HTSA1; BCR521E6327;

Parameters

Power dissipation:	330mW
Manufacturer:	INFINEON
Current gain factor:	20
Case:	SOT23-3
Cutoff frequency:	100MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR521E6327 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	5+	20+	100+	500+	2000+
Net price (EUR)	0,2086	0,1149	0,0761	0,0633	0,0596

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Power dissipation:	330mW
Manufacturer:	INFINEON
Current gain factor:	20
Case:	SOT23-3
Cutoff frequency:	100MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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