BCR533

Symbol Micros: TBCR533

78428

TBCR533

Contractor Symbol:

Case : SOT23

Datasheet

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NPN 500mA 50V 330mW 100MHz w/ res. 10k+10k BCR533E6327, BCR533E6327HTSA1

Parameters

Power dissipation:	330mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT23
Cutoff frequency:	100MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR533E6327HTSA1 RoHS Case style: SOT23t/r Datasheet

In stock:

500 pcs.

Quantity of pcs.	3+	20+	100+	500+	2000+
Net price (EUR)	0,2676	0,1433	0,1115	0,1009	0,0976

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Packaging:
500 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: BCR533E6327HTSA1 Case style: SOT23  

External warehouse:

21000 pcs.

Quantity of pcs.	500+ (Please wait for the order confirmation)
Net price (EUR)	0,0976

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Packaging:
500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Power dissipation:	330mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT23
Cutoff frequency:	100MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	NPN

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