BCR533

Symbol Micros: TBCR533
Contractor Symbol:
Case : SOT23
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NPN 500mA 50V 330mW 100MHz w/ res. 10k+10k BCR533E6327, BCR533E6327HTSA1
Parameters
Power dissipation: 330mW
Current gain factor: 70
Cutoff frequency: 100MHz
Manufacturer: Infineon Technologies
Case: SOT23
Max. collector current: 500mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR533E6327HTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
500 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2847 0,1526 0,1188 0,1074 0,1039
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Packaging:
500
Power dissipation: 330mW
Current gain factor: 70
Cutoff frequency: 100MHz
Manufacturer: Infineon Technologies
Case: SOT23
Max. collector current: 500mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN

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