BCR533

Symbol Micros: TBCR533
Contractor Symbol:
Case : SOT23
NPN 500mA 50V 330mW 100MHz w/ res. 10k+10k BCR533E6327, BCR533E6327HTSA1
Parameters
Power dissipation: 330mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT23
Cutoff frequency: 100MHz
Max. collector current: 500mA
Max collector-emmiter voltage: 50V
Manufacturer:: Infineon Manufacturer part number: BCR533E6327HTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
500 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,2639 0,1413 0,1100 0,0995 0,0962
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Packaging:
500
Power dissipation: 330mW
Manufacturer: Infineon Technologies
Current gain factor: 70
Case: SOT23
Cutoff frequency: 100MHz
Max. collector current: 500mA
Max collector-emmiter voltage: 50V
Operating temperature (range): -65°C ~ 150°C
Transistor type: NPN