BCR553E6327 INFINEON

Symbol Micros: TBCR553

111473

TBCR553

Contractor Symbol:

Case : SOT23-3

Datasheet

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PNP 50V 500mA 150MHz 330MHz

Parameters

Power dissipation:	330mW
Manufacturer:	Infineon Technologies
Current gain factor:	40
Case:	SOT23-3
Cutoff frequency:	150MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V

All parameters

         

 

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• Parameters

Power dissipation:	330mW
Manufacturer:	Infineon Technologies
Current gain factor:	40
Case:	SOT23-3
Cutoff frequency:	150MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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