BCR583E6327HTSA1

Symbol Micros: TBCR583

113334

TBCR583

Contractor Symbol:

Case : SOT23-3

Datasheet

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Transistor PNP; 70; 330mW; 50V; 500mA; 150MHz; -65°C ~ 150°C; Replacement: BCR583E6327HTSA1; BCR583; BCR583E6327;

Parameters

Power dissipation:	330mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT23-3
Cutoff frequency:	150MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V

All parameters

Manufacturer:: Infineon Manufacturer part number: BCR583E6327HTSA1 RoHS Case style: SOT23-3 t/r Datasheet

In stock:

2900 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2616	0,1327	0,0803	0,0638	0,0582

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Power dissipation:	330mW
Manufacturer:	Infineon Technologies
Current gain factor:	70
Case:	SOT23-3
Cutoff frequency:	150MHz
Max. collector current:	500mA
Max collector-emmiter voltage:	50V
Operating temperature (range):	-65°C ~ 150°C
Transistor type:	PNP

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