BCV26 JGSEMI
Symbol Micros:
TBCV26 JGS
Case : SOT23
Transistor Darlington PNP; 20000; 200mW; 30V; 500mA; 220MHz; -65°C ~ 150°C; Equivalent: BCV26,215; BCV26,235; BCV26E6327HTSA1;
Parameters
| Power dissipation: | 200mW |
| Manufacturer: | JGSEMI |
| Case: | SOT23 |
| Current gain factor: | 20000 |
| Cutoff frequency: | 220MHz |
| Max. collector current: | 500mA |
| Max collector-emmiter voltage: | 30V |
| Power dissipation: | 200mW |
| Manufacturer: | JGSEMI |
| Case: | SOT23 |
| Current gain factor: | 20000 |
| Cutoff frequency: | 220MHz |
| Max. collector current: | 500mA |
| Max collector-emmiter voltage: | 30V |
| Operating temperature (range): | -65°C ~ 150°C |
| Transistor type: | Darlington PNP |
Equivalents
Manufacturer::
ON-Semiconductor
Manufacturer part number:
BCV26 RoHS
Case style:
SOT23t/r
In stock
1400 pcs.
| Quantity of pcs. | 5+ | 20+ | 100+ | 500+ | 3000+ |
| Net price (EUR) | 0,2140 | 0,1085 | 0,0659 | 0,0522 | 0,0475 |
Packaging: 3000
Quantity (multiple 1)
Item available on request
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