BCV27,215

Symbol Micros: TBCV27
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
Transistor NPN; 20000; 350mW; 30V; 1,2A; 220MHz; -55°C ~ 150°C; Replacement: BCV27E6327HTSA1; BCV27,215; BCV27E6327; BCV27.215;
Parameters
Power dissipation: 350mW
Current gain factor: 20000
Cutoff frequency: 220MHz
Manufacturer: ON SEMICONDUCTOR
Case: SOT23
Max. collector current: 1,2A
Max collector-emmiter voltage: 30V
Manufacturer:: NXP Manufacturer part number: BCV27 RoHS Case style: SOT23t/r  
In stock:
630 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,2090 0,0992 0,0558 0,0425 0,0380
Add to comparison tool
Packaging:
3000/15000
Power dissipation: 350mW
Current gain factor: 20000
Cutoff frequency: 220MHz
Manufacturer: ON SEMICONDUCTOR
Case: SOT23
Max. collector current: 1,2A
Max collector-emmiter voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Transistor type: NPN

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols