BCV27,215

Symbol Micros: TBCV27

Case : SOT23

Transistor NPN; 20000; 350mW; 30V; 1,2A; 220MHz; -55°C ~ 150°C; Replacement: BCV27E6327HTSA1; BCV27,215; BCV27E6327; BCV27.215;

Parameters

Power dissipation:	350mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	20000
Case:	SOT23
Cutoff frequency:	220MHz
Max. collector current:	1,2A
Max collector-emmiter voltage:	30V

Manufacturer:: NXP Manufacturer part number: BCV27,215 RoHS Case style: SOT23t/r

In stock:

2700 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2093	0,1060	0,0642	0,0509	0,0465

Manufacturer:: NXP Manufacturer part number: BCV27 RoHS Case style: SOT23t/r

In stock:

210 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2093	0,1060	0,0642	0,0509	0,0465

Power dissipation:	350mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	20000
Case:	SOT23
Cutoff frequency:	220MHz
Max. collector current:	1,2A
Max collector-emmiter voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

Quantity of pcs.	5+	30+	200+	1000+	5000+
Net price (EUR)	0,1530	0,0612	0,0355	0,0297	0,0278