BCW66HTA

Symbol Micros: TBCW66HTA Diodes

150509

TBCW66HTA Diodes

Contractor Symbol:

Case : SOT23-3

Datasheet

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Transistor NPN; 630; 310mW, 45V; 800mA; 100MHz, -55°C ~ 150°C;

Parameters

Power dissipation:	310mW
Manufacturer:	DIODES
Case:	SOT23-3
Current gain factor:	630
Cutoff frequency:	100MHz
Max. collector current:	800mA
Max collector-emmiter voltage:	45V

All parameters

         

 

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• Parameters

Power dissipation:	310mW
Manufacturer:	DIODES
Case:	SOT23-3
Current gain factor:	630
Cutoff frequency:	100MHz
Max. collector current:	800mA
Max collector-emmiter voltage:	45V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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