BCX56-16 SOT89 HT SEMI

Symbol Micros: TBCX5616 HTSEMI

535829

TBCX5616 HTSEMI

Contractor Symbol:

Case : SOT89

Datasheet

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500mW 80V 1A NPN SOT-89 Single Bipolar Transistors RoHS

Parameters

Power dissipation:	500mW
Manufacturer:	HT
Case:	SOT89
Current gain factor:	250
Cutoff frequency:	130MHz
Max. collector current:	1A
Max collector-emmiter voltage:	80V

All parameters

         

 

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• Parameters

Power dissipation:	500mW
Manufacturer:	HT
Case:	SOT89
Current gain factor:	250
Cutoff frequency:	130MHz
Max. collector current:	1A
Max collector-emmiter voltage:	80V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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